AG ASSOCIATES
HEATPULSE 610
RAPID THERMAL PROCESSOR

Features and Applications
 

Manually loaded and capable of processing
silicon and III-V substrates up to 150mm in diameter,
HeatPulse 610 provides solutions to your process development
and monitoring needs.  Equipped with a graphical user interface
to improve operator productivity, HeatPulse 610 offers
recipe management and system diagnostics.
 

Major System Features

Semiconductor grade quartz process chamber
21 tungsten halogen lamps in
an upper and lower array
Extended Range Pyrometer:
400°C -1300oC (200°C w/TC)
Graphical User Interface (GUI)
 
These capabilities,
combined with the heating chamber's
cold-wall design and
superior heating uniformity,
provide significant advantages
over conventional furnace processing.

Key Features Include:

Closed-loop temperature control with
pyrometer or thermocouple
temperature sensing.
Precise time-temperature profiles
tailored to suit specific process
requirements.
Fast heating and cooling rates
unobtainable in conventional
technologies.
Consistent wafer-to-wafer
process cycle repeatability.
Elimination of external contamination.
Small footprint and energy efficiency.

Performance Specifications

Recommended Steady State
Temperature Range: 400-1250°C.
Steady-State Temperature Stability: ± 2° .
Temperature Monitoring Mechanisms:
Extended Range Pyrometer (ERP), used
throughout the recommended temperature range,
or a thermocouple, used for
process temperatures below 400°C.
Heating Rate:
1-200° C per second, user-controllable.
Cooling Rate:
Temperature dependent; max 150°C per second.
Maximum Non-uniformity:
±5°C across a 6" (150mm) wafer at 1150°C.
(This is a one sigma deviation 100 angstrom oxide.)
For a titanium silicidation process,
no more than 4% increase in non-uniformity
during the first anneal at 650°C to 700°C.
Post-anneal sheet resistivity measured
on a 150mm wafer annealed at 1100°C
for 10 seconds.
Implant:
As 1E16 50 KeV with implant uniformity ≤0.3%
Lamp Life:
Unconditionally guaranteed for three years.
Steady State Time:
1-9999 sec. (1-600 sec. recommended)
Wafer Sizes for the HEATPULSE 610:
2", 3", 4", 5" and 6".
Process Gases:
The HEATPULSE system delivers
one non-corrosive process gas
with manually controlled flow.
Optional MFC, Up to 4.
GUI software Standard , upgrade to P-CAT
16 bit A/D
 
Process Role of RTP
Anneal Improve concentration profile
of dopants in silicon substrate
after implantation
Oxidation Form a uniform layer of silicon dioxide
to insulate a circuit element
Silicidation Decrease the resistivity of tungsten silicide
or titanium silicide caps on polycrystalline device gates
Nitridization Form a silicon nitride layer for insulation,
protection against oxidation, or anti-reflective coatings
BSPG
Reflow		 Improve the surface characteristics
such as uniformity for boron phosphorous spin
on glass (BPSG). Also called densification
Ion
Activation		 Cause implanted ions such as arsenic and boron
to integrate into the silicon crystal lattice
to improve surface conductivity
Platinum
Sintering		 Form a thermionic bond
between platinum and silicon to
increase the current-carrying capability of a circuit
Salicidation Self-aligning Silicidation.
Increase the conductivity
of refractory metal silicides
 used to connect gate material
to metallic vias. Similar to Silicidation